SiC wafer 6”   Specification as following: 150 mm outer diameter with 47.5 mm primary flat length4H, n-type, 4 degrees off-axis, <0.5 micropipes/cm2,For low-R SiC, resistivity 0.015-0.025 ohm-cm on bulk surfacesdiameter:150mm (+/- 0.5mm)thickness: 500um (+/- 25um)warp <60umbow <40umTTV <15umSi-side epi-grade polish